| European Case Law Identifier: | ECLI:EP:BA:2012:T227808.20120320 | ||||||||
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| Date of decision: | 20 March 2012 | ||||||||
| Case number: | T 2278/08 | ||||||||
| Application number: | 00300391.0 | ||||||||
| IPC class: | H01L 29/78 H01L 29/10 H01L 21/336 |
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| Language of proceedings: | EN | ||||||||
| Distribution: | D | ||||||||
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| Title of application: | Power MOSFET having a trench gate electrode and method of making the same | ||||||||
| Applicant name: | SILICONIX Incorporated | ||||||||
| Opponent name: | - | ||||||||
| Board: | 3.4.03 | ||||||||
| Headnote: | - | ||||||||
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| Keywords: | Main request not admitted Inventive step (no) - first and second auxiliary request |
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| Catchwords: |
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Source: http://www.epo.org/law-practice/case-law-appeals/recent/t082278eu1.html
Date retrieved: 17 May 2021
